關(guān)于我們
湖南省長沙市車站北路湘域智慧南塔6樓
安徽省合肥市高新技術(shù)產(chǎn)業(yè)開發(fā)區(qū)科學(xué)大道110號新材料園F9A號樓511室
0731-84284278
0731-84284278
service@hncsw.net
0731-84284278
吉時利 KEITHLEY 4200-BTI-A 超快NBTI/PBTI包
名稱：可編程電源
品牌：
型號：
簡介：The Model 4200-BTI-A Ultra-Fast BTI Package combines all the hardware and software needed for a broad range of ultra-fas...
申請服務(wù)
- 產(chǎn)品介紹
The Model 4200-BTI-A Ultra-Fast BTI Package combines all the hardware and software needed for a broad range of ultra-fast BTI test applications, as well as general characterization and lab automation tasks.
Best-in-class test speed allows faster, more complete device characterization
Begin measuring BTI degradation as soon as 30ns after stress is removed
Measure transistor VT in less than 1µs using ID–VG sweep method
Model 4225-RPM Remote Amplifier/Switch
Switches automatically between low-level precision DC I-V (via standard SMUs) and ultra-fast I-V measurements with no need for re-cabling
Improves single-pulse source and measurement performance by minimizing cable parasitic effects and increasing low current sensitivity
Best high-speed, low-current measurement sensitivity available in a single-box integrated solution
Supports sub-microsecond pulse characterization of drain current at reduced drain voltage, minimizing drain-to- source fields that could otherwise skew test results
Ensures the source/measure instrumentation won't be the limiting factor when making low-level measurements
Detects degradation trends sooner during the test, reduces the time needed to perform process reliability monitoring
Simple, predictable interconnect scheme prevents measurement problems due to incorrect DUT connections
Best-in-class test speed allows faster, more complete device characterization
Begin measuring BTI degradation as soon as 30ns after stress is removed
Measure transistor VT in less than 1µs using ID–VG sweep method
Model 4225-RPM Remote Amplifier/Switch
Switches automatically between low-level precision DC I-V (via standard SMUs) and ultra-fast I-V measurements with no need for re-cabling
Improves single-pulse source and measurement performance by minimizing cable parasitic effects and increasing low current sensitivity
Best high-speed, low-current measurement sensitivity available in a single-box integrated solution
Supports sub-microsecond pulse characterization of drain current at reduced drain voltage, minimizing drain-to- source fields that could otherwise skew test results
Ensures the source/measure instrumentation won't be the limiting factor when making low-level measurements
Detects degradation trends sooner during the test, reduces the time needed to perform process reliability monitoring
Simple, predictable interconnect scheme prevents measurement problems due to incorrect DUT connections
最新產(chǎn)品
相關(guān)產(chǎn)品
